Semiconductor device

Provided is a semiconductor device having improved performance. A semiconductor substrate is formed with unit MISFET elements. The unit MISFET elements have respective source regions electrically coupled to each other via a first source interconnect line and a second source interconnect line. The un...

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Bibliographische Detailangaben
Hauptverfasser:	TSUYOSHI KACHI, KEISUKE FURUYA, YOSHINORI YOSHIDA, HIROKAZU KATO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Provided is a semiconductor device having improved performance. A semiconductor substrate is formed with unit MISFET elements. The unit MISFET elements have respective source regions electrically coupled to each other via a first source interconnect line and a second source interconnect line. The unit MISFET elements have respective gate electrodes electrically coupled to each other via a first gate interconnect line and also electrically coupled to a second gate interconnect line in the same layer as that of the second source interconnect line via the first gate interconnect line. The unit MISFET elements have respective drain regions electrically coupled to a back surface electrode via a conductive plug embedded in a trench of the semiconductor substrate. Each of the first source interconnect line and the first gate interconnect line has a thickness smaller than that of the second source interconnect line. Over the plug, the first gate interconnect line extends.