A preparing method of an ITO film

A preparing method of an ITO film is provided. The method adopts a magnetron sputtering preparation process. The flux of O2 fed in the process steps changes along with time. By utilization of the method, the ITO film with a wide refractive index range can be prepared, so that the refractive index ra...

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description A preparing method of an ITO film is provided. The method adopts a magnetron sputtering preparation process. The flux of O2 fed in the process steps changes along with time. By utilization of the method, the ITO film with a wide refractive index range can be prepared, so that the refractive index range of the ITO film can be matched with the refractive indexes of GaN and an encapsulating material and light extraction loss caused by total reflection is effectively reduced, thus increasing the light extraction efficiency of LED devices.
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subjects CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title A preparing method of an ITO film
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