A preparing method of an ITO film
A preparing method of an ITO film is provided. The method adopts a magnetron sputtering preparation process. The flux of O2 fed in the process steps changes along with time. By utilization of the method, the ITO film with a wide refractive index range can be prepared, so that the refractive index ra...
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description | A preparing method of an ITO film is provided. The method adopts a magnetron sputtering preparation process. The flux of O2 fed in the process steps changes along with time. By utilization of the method, the ITO film with a wide refractive index range can be prepared, so that the refractive index range of the ITO film can be matched with the refractive indexes of GaN and an encapsulating material and light extraction loss caused by total reflection is effectively reduced, thus increasing the light extraction efficiency of LED devices. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN104651785A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN104651785A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN104651785A3</originalsourceid><addsrcrecordid>eNrjZFB0VCgoSi1ILMrMS1fITS3JyE9RyE9TSMxT8AzxV0jLzMnlYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GBiZmpobmFqaOxsSoAQAUgySU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>A preparing method of an ITO film</title><source>esp@cenet</source><creator>TIAN LIFEI</creator><creatorcontrib>TIAN LIFEI</creatorcontrib><description>A preparing method of an ITO film is provided. The method adopts a magnetron sputtering preparation process. The flux of O2 fed in the process steps changes along with time. By utilization of the method, the ITO film with a wide refractive index range can be prepared, so that the refractive index range of the ITO film can be matched with the refractive indexes of GaN and an encapsulating material and light extraction loss caused by total reflection is effectively reduced, thus increasing the light extraction efficiency of LED devices.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150527&DB=EPODOC&CC=CN&NR=104651785A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150527&DB=EPODOC&CC=CN&NR=104651785A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TIAN LIFEI</creatorcontrib><title>A preparing method of an ITO film</title><description>A preparing method of an ITO film is provided. The method adopts a magnetron sputtering preparation process. The flux of O2 fed in the process steps changes along with time. By utilization of the method, the ITO film with a wide refractive index range can be prepared, so that the refractive index range of the ITO film can be matched with the refractive indexes of GaN and an encapsulating material and light extraction loss caused by total reflection is effectively reduced, thus increasing the light extraction efficiency of LED devices.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFB0VCgoSi1ILMrMS1fITS3JyE9RyE9TSMxT8AzxV0jLzMnlYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GBiZmpobmFqaOxsSoAQAUgySU</recordid><startdate>20150527</startdate><enddate>20150527</enddate><creator>TIAN LIFEI</creator><scope>EVB</scope></search><sort><creationdate>20150527</creationdate><title>A preparing method of an ITO film</title><author>TIAN LIFEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN104651785A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>TIAN LIFEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TIAN LIFEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>A preparing method of an ITO film</title><date>2015-05-27</date><risdate>2015</risdate><abstract>A preparing method of an ITO film is provided. The method adopts a magnetron sputtering preparation process. The flux of O2 fed in the process steps changes along with time. By utilization of the method, the ITO film with a wide refractive index range can be prepared, so that the refractive index range of the ITO film can be matched with the refractive indexes of GaN and an encapsulating material and light extraction loss caused by total reflection is effectively reduced, thus increasing the light extraction efficiency of LED devices.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | A preparing method of an ITO film |
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