A preparing method of an ITO film

A preparing method of an ITO film is provided. The method adopts a magnetron sputtering preparation process. The flux of O2 fed in the process steps changes along with time. By utilization of the method, the ITO film with a wide refractive index range can be prepared, so that the refractive index ra...

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Bibliographische Detailangaben
1. Verfasser:	TIAN LIFEI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A preparing method of an ITO film is provided. The method adopts a magnetron sputtering preparation process. The flux of O2 fed in the process steps changes along with time. By utilization of the method, the ITO film with a wide refractive index range can be prepared, so that the refractive index range of the ITO film can be matched with the refractive indexes of GaN and an encapsulating material and light extraction loss caused by total reflection is effectively reduced, thus increasing the light extraction efficiency of LED devices.