Method for manufacturing hetero-junction thermal photovoltaic batteries

The invention relates to a method for manufacturing hetero-junction thermal photovoltaic batteries. The method includes manufacturing procedures of sequentially growing emitting regions, electrode contact layers and upper electrodes on the upper surfaces of base regions; photoetching the upper electrodes; eroding the upper electrodes and the electrode contact layers; manufacturing optical anti-reflection layers; arranging lower electrodes on the lower surfaces of the base regions by means of vapor deposition. The base regions comprise p-Ge layers with narrow forbidden bands. N-GaInP layers with wide forbidden bands are used as the emitter regions, and the thicknesses of the n-GaInP layers are smaller than 500nm. The method has the advantages that the n-GaInP layers with the wide forbidden bands and precisely adjustable Ga to In proportions are used as the emitter regions, p-Ge substrates with narrow forbidden bands are used as the base regions, accordingly, hetero-junction structures with the emitter regions and the base regions which are provided with precisely matched crystal lattices can be formed, GaInP/Ge interface recombination can be reduced, light absorbed by the emitter regions with wide band gaps can be reduced, light absorbed by the base regions can be increased, recombination of photon-generated carriers at the type-n emitter regions and the surfaces of the type-n emitter regions can be reduced, the photon-generated carrier collection efficiency can be improved, and the photoelectric conversion efficiency of the batteries can be effectively improved.