Crystalline silicon growth device

The invention discloses a crystalline silicon growth device. The crystalline silicon growth device comprises a fixed base, an outer insulation barrel, an inner insulation barrel, a centre shaft supporting rod, a heating electrode, a heater and a water cooling device, wherein a snap ring is arranged...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LI SHENGQI, CHEN KUNZHU, LIN YANTING, ZHANG LIFENG
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The invention discloses a crystalline silicon growth device. The crystalline silicon growth device comprises a fixed base, an outer insulation barrel, an inner insulation barrel, a centre shaft supporting rod, a heating electrode, a heater and a water cooling device, wherein a snap ring is arranged on an inner side of an upper end opening on the outer insulation barrel; the water cooling device is snapped on the snap ring; the inner insulation barrel is arranged inside the outer insulation barrel; a graphite felt layer is filled between the inner insulation barrel and the outer insulation barrel; an insulation layer is arranged inside the inner insulation barrel; a certain interval is reserved between the insulation layer and the inner insulation barrel; the heater is arranged inside the insulation layer; two fixed lugs are bilaterally and symmetrically arranged at the lowest edge positions on an inner side of the heater in such a way that a center line of the heater is taken as a baseline; electrode fixing holes are arranged on the fixed lugs; a heat conducting layer is arranged on the inner side of the heater; the heating electrodes are fixed on the electrode fixing holes which are arranged on the fixed lugs; the centre shaft supporting rod is arranged at a center position of the fixed base; a crucible holder is arranged at an upper end of the centre supporting rod and a crucible is arranged on the crucible holder. The crystalline silicon growth device has the advantages of simple structure, stable heat distribution and uniform heat flow.