Heterostructure material with orbital and charge ordering transition and anisotropic field resistance effect, preparation method and purpose thereof

The invention discloses heterostructure material with orbital and charge ordering characteristic and anisotropic field resistance effect. The heterostructure material comprises (011) or an oblique PMN-PT single crystal substrate thereof and a perovskite manganese oxide film grown thereon in an epita...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HU FENGXIA, WANG JING, LU HAIXIA, KUANG HAO, SUN JIRONG, ZHAO YINGYING, SHEN BAOGEN
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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