Heterostructure material with orbital and charge ordering transition and anisotropic field resistance effect, preparation method and purpose thereof

The invention discloses heterostructure material with orbital and charge ordering characteristic and anisotropic field resistance effect. The heterostructure material comprises (011) or an oblique PMN-PT single crystal substrate thereof and a perovskite manganese oxide film grown thereon in an epitaxial growth mode, wherein the lattice mismatch between the substrate and film is 1-6%. The heterostructure material with the orbital and charge ordering transition and anisotropic field resistance effect realizes the orbital and charge ordering transition in the film through leading in the large anisotropic strain in the surface. The formed orbital and charge ordering arrangement is sensitive to an external bias field, the film resistance is greatly lowered under the effect of the bias field, a low-temperature zone generates a large anisotropic field resistance effect higher than a magnetic resistance, and the field resistance amplitude can be regulated conveniently to meet the actual application requirements through controlling the film thickness, and the bias field size and polarity. The heterostructure material is featured with simple preparation technique, low power consumption, convenience and easiness in operation and the like, and the heterostructure material is good for apparatus development and application.