SiC metal oxide semiconductor (MOS) capacitor of Al2O3/LaScO3/SiO2 stacked gate dielectric layer and production method of SiC MOS capacitor

The invention relates to a SiC metal oxide semiconductor (MOS) capacitor of an Al2O3/LaScO3/SiO2 stacked gate dielectric layer and a production method of the SiC MOS capacitor. The SiC MOS capacitor comprises a heavily doped SiC substrate layer; a lightly doped SiC epitaxial layer is on the SiC substrate layer; the stacked gate dielectric layer comprises a lower SiO2 transition layer, a LaScO3 layer and an Al2O3 covering layer; the lower SiO2 transition layer is arranged on the SiC epitaxial layer; the LaScO3 layer is arranged on the lower SiO2 transition layer; the Al2O3 covering layer is arranged on the LaScO3 layer; and a positive electrode and a negative electrode are respectively connected with the surface of the Al2O3 covering layer and the back surface of the SiC substrate layer. By the SiC MOS capacitor of the stacked gate dielectric layer, the density of interface states and boundary traps is reduced, MOS channel mobility is improved, the gate leak current is reduced, voltage endurance capabitlity of the dielectric layer is improved, and the quality and the reliability of the SiC MOS capacitor are enhanced.