Epitaxial silicon wafer and production method for the epitaxial silicon wafer
The objective of the invention is to provide a production method for an epitaxial silicon wafer exhibiting a high degree of flatness at the peripheral edge section thereof and the epitaxial silicon wafer obtained through the production method. The method is characterized in that: an epitaxial layer...
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Sprache: | eng |
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Zusammenfassung: | The objective of the invention is to provide a production method for an epitaxial silicon wafer exhibiting a high degree of flatness at the peripheral edge section thereof and the epitaxial silicon wafer obtained through the production method. The method is characterized in that: an epitaxial layer (3) is formed on the front surface (23) of a silicon wafer (2), the planar orientation of the front surface (23) of the silicon wafer (2) is a (100) plane or a (110) plane, and the chamfer width (A1) of the edge section of the front surface (23) side is 200 [mu]m or less. |
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