Plasma processing method and plasma processing apparatus

A plasma processing method and a plasma processing apparatus are provided and effectively remove a metal-containing deposit. According to the method, a deposit, which adheres to a member within a processing vessel and contains at least one of a transition metal and a base metal, is removed by plasma...

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Bibliographische Detailangaben
Hauptverfasser:	RYOSUKE NIITSUMA, TAKAO FUNAKUBO, TSUTOMU ITO, MASARU NISHINO, SHINICHI KOZUKA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	A plasma processing method and a plasma processing apparatus are provided and effectively remove a metal-containing deposit. According to the method, a deposit, which adheres to a member within a processing vessel and contains at least one of a transition metal and a base metal, is removed by plasma of a processing gas containing a CxFy gas, and not containing a chlorine-based gas or a nitrogen-based gas, wherein the x is an integer equal to or less than 2 and the y is an integer equal to or less than 6.