Crystalline silicon cell and manufacturing method thereof
The invention provides a crystalline silicon cell and a manufacturing method of the crystalline silicon cell. The method includes the following steps of texture surface making, diffusion junction making, edge etching, phosphorosilicate glass removal, silicon nitride antireflection layer deposition,...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | GONG YI CHEN ZUOGENG LYU WENHUI |
| description | The invention provides a crystalline silicon cell and a manufacturing method of the crystalline silicon cell. The method includes the following steps of texture surface making, diffusion junction making, edge etching, phosphorosilicate glass removal, silicon nitride antireflection layer deposition, electrode printing, sintering and test sorting. The secondary edge etching process is introduced in the steps, a silicon nitride layer on the edge of a crystalline silicon cell piece is removed, the parallel resistance of the crystalline silicon cell is increased, and the photoelectric conversion efficiency of the crystalline silicon cell is improved. In addition, the secondary edge etching process can be selectively introduced after the silicon nitride antireflection layer deposition process and the silicon nitride layer on the edge of the cell is removed; or the secondary edge etching process can be selectively introduced after the sintering process and the silicon nitride layer on the edge of the cell is removed. The method is simple, easy to operate and free of limitation to other process steps. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN104538498A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN104538498A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN104538498A3</originalsourceid><addsrcrecordid>eNrjZLB0LqosLknMycnMS1UozszJTM7PU0hOzclRSMxLUchNzCtNS0wuKS3KzEtXyE0tychPUSjJSC1KzU_jYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GBiamxhYmlhaOxsSoAQBxtS8k</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Crystalline silicon cell and manufacturing method thereof</title><source>esp@cenet</source><creator>GONG YI ; CHEN ZUOGENG ; LYU WENHUI</creator><creatorcontrib>GONG YI ; CHEN ZUOGENG ; LYU WENHUI</creatorcontrib><description>The invention provides a crystalline silicon cell and a manufacturing method of the crystalline silicon cell. The method includes the following steps of texture surface making, diffusion junction making, edge etching, phosphorosilicate glass removal, silicon nitride antireflection layer deposition, electrode printing, sintering and test sorting. The secondary edge etching process is introduced in the steps, a silicon nitride layer on the edge of a crystalline silicon cell piece is removed, the parallel resistance of the crystalline silicon cell is increased, and the photoelectric conversion efficiency of the crystalline silicon cell is improved. In addition, the secondary edge etching process can be selectively introduced after the silicon nitride antireflection layer deposition process and the silicon nitride layer on the edge of the cell is removed; or the secondary edge etching process can be selectively introduced after the sintering process and the silicon nitride layer on the edge of the cell is removed. The method is simple, easy to operate and free of limitation to other process steps.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150422&DB=EPODOC&CC=CN&NR=104538498A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150422&DB=EPODOC&CC=CN&NR=104538498A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GONG YI</creatorcontrib><creatorcontrib>CHEN ZUOGENG</creatorcontrib><creatorcontrib>LYU WENHUI</creatorcontrib><title>Crystalline silicon cell and manufacturing method thereof</title><description>The invention provides a crystalline silicon cell and a manufacturing method of the crystalline silicon cell. The method includes the following steps of texture surface making, diffusion junction making, edge etching, phosphorosilicate glass removal, silicon nitride antireflection layer deposition, electrode printing, sintering and test sorting. The secondary edge etching process is introduced in the steps, a silicon nitride layer on the edge of a crystalline silicon cell piece is removed, the parallel resistance of the crystalline silicon cell is increased, and the photoelectric conversion efficiency of the crystalline silicon cell is improved. In addition, the secondary edge etching process can be selectively introduced after the silicon nitride antireflection layer deposition process and the silicon nitride layer on the edge of the cell is removed; or the secondary edge etching process can be selectively introduced after the sintering process and the silicon nitride layer on the edge of the cell is removed. The method is simple, easy to operate and free of limitation to other process steps.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB0LqosLknMycnMS1UozszJTM7PU0hOzclRSMxLUchNzCtNS0wuKS3KzEtXyE0tychPUSjJSC1KzU_jYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GBiamxhYmlhaOxsSoAQBxtS8k</recordid><startdate>20150422</startdate><enddate>20150422</enddate><creator>GONG YI</creator><creator>CHEN ZUOGENG</creator><creator>LYU WENHUI</creator><scope>EVB</scope></search><sort><creationdate>20150422</creationdate><title>Crystalline silicon cell and manufacturing method thereof</title><author>GONG YI ; CHEN ZUOGENG ; LYU WENHUI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN104538498A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>GONG YI</creatorcontrib><creatorcontrib>CHEN ZUOGENG</creatorcontrib><creatorcontrib>LYU WENHUI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GONG YI</au><au>CHEN ZUOGENG</au><au>LYU WENHUI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Crystalline silicon cell and manufacturing method thereof</title><date>2015-04-22</date><risdate>2015</risdate><abstract>The invention provides a crystalline silicon cell and a manufacturing method of the crystalline silicon cell. The method includes the following steps of texture surface making, diffusion junction making, edge etching, phosphorosilicate glass removal, silicon nitride antireflection layer deposition, electrode printing, sintering and test sorting. The secondary edge etching process is introduced in the steps, a silicon nitride layer on the edge of a crystalline silicon cell piece is removed, the parallel resistance of the crystalline silicon cell is increased, and the photoelectric conversion efficiency of the crystalline silicon cell is improved. In addition, the secondary edge etching process can be selectively introduced after the silicon nitride antireflection layer deposition process and the silicon nitride layer on the edge of the cell is removed; or the secondary edge etching process can be selectively introduced after the sintering process and the silicon nitride layer on the edge of the cell is removed. The method is simple, easy to operate and free of limitation to other process steps.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_CN104538498A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Crystalline silicon cell and manufacturing method thereof |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T03%3A57%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=GONG%20YI&rft.date=2015-04-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN104538498A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |