Crystalline silicon cell and manufacturing method thereof
The invention provides a crystalline silicon cell and a manufacturing method of the crystalline silicon cell. The method includes the following steps of texture surface making, diffusion junction making, edge etching, phosphorosilicate glass removal, silicon nitride antireflection layer deposition,...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The invention provides a crystalline silicon cell and a manufacturing method of the crystalline silicon cell. The method includes the following steps of texture surface making, diffusion junction making, edge etching, phosphorosilicate glass removal, silicon nitride antireflection layer deposition, electrode printing, sintering and test sorting. The secondary edge etching process is introduced in the steps, a silicon nitride layer on the edge of a crystalline silicon cell piece is removed, the parallel resistance of the crystalline silicon cell is increased, and the photoelectric conversion efficiency of the crystalline silicon cell is improved. In addition, the secondary edge etching process can be selectively introduced after the silicon nitride antireflection layer deposition process and the silicon nitride layer on the edge of the cell is removed; or the secondary edge etching process can be selectively introduced after the sintering process and the silicon nitride layer on the edge of the cell is removed. The method is simple, easy to operate and free of limitation to other process steps. |
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