Method for preparing semiconductor bridge polycrystalline silicon

The invention relates to a method for preparing semiconductor bridge polycrystalline silicon. The method comprises the steps of depositing a polycrystalline silicon film by a low pressure chemical vapor deposition method; etching a polycrystalline silicon bridge on the polycrystalline silicon film and sputtering titanium-tungsten alloy; exposing two ends of a resistor by photoetching and covering the rest part of the resistor with photoresist; carrying out gold plating with the titanium-tungsten alloy as a backing; removing the photoresist, etching off the sputtered titanium-tungsten alloy protected by the photoresist and carrying out washing; and annealing the semiconductor polycrystalline silicon in nitrogen environment so as to obtain the semiconductor bridge polycrystalline silicon. The method is simple and easy to operate; and the prepared semiconductor bridge polycrystalline silicon has uniform particles, high doping density, small resistance variation and more stable performances.