MOCVD reactor

The invention discloses an MOCVD reactor. The reactor comprises a rotating support shaft, a substrate carrier plate arranged at the top of the rotating support shaft, and a heating assembly arranged below the substrate carrier plate; and the heating assembly is an up-and-down arranged multilayer hea...

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Bibliographische Detailangaben
Hauptverfasser:	CHEN TECHAO, LIU XIN, LUO CAIWANG, CHEN FENGWU, WEI WEI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention discloses an MOCVD reactor. The reactor comprises a rotating support shaft, a substrate carrier plate arranged at the top of the rotating support shaft, and a heating assembly arranged below the substrate carrier plate; and the heating assembly is an up-and-down arranged multilayer heating assembly, a gap exists between adjacent two layers of the heating assembly, and the heating assembly is provided with a heat shielding assembly. The design of multilayer heating elements makes the area below the whole carrier plate completely utilized, so the high temperature radiation area is increased, the heating elements heat the carrier plate to a high temperature, the heating efficiency increases by about 30%, and a wide temperature window is provided for the deposition of high quality AlGaN/AlN epitaxial films.