Silicon-on-insulator radio-frequency switch device structure

The invention provides a silicon-on-insulator radio-frequency switch device structure. The silicon-on-insulator radio-frequency switch device structure comprises a buried oxide layer arranged on a substrate, a device layer arranged on the buried oxide layer, a gate oxide structure arranged on the device layer, a comb-shaped gate structure arranged on the gate oxide structure, a comb-shaped source structure and a comb-shaped drain structure. The device layer comprises source-drain regions and device channel regions among the source-drain regions. The comb-shaped source structure and the comb-shaped drain structure are connected to the source-drain regions through contact holes. Comb teeth of the comb-shaped gate structure, comb teeth of the comb-shaped source structure and comb teeth of the comb-shaped drain structure are parallel, the comb teeth of the comb-shaped source structure and the comb teeth of the comb-shaped drain structure are arranged in a staggered mode, the comb teeth of the comb-shaped gate structure are located between the comb teeth of the comb-shaped source structure and the comb teeth of the comb-shaped drain structure, the comb teeth of the comb-shaped source structure and the comb teeth of the comb-shaped drain structure do not face each other in the extension direction of the comb teeth, and the comb teeth of the comb-shaped source structure and the comb teeth of the comb-shaped gate structure overlap each other in the extension direction of the comb teeth.