Method for testing low working voltage failure of monitoring device

The invention discloses a method for testing low working voltage failure of a monitoring device and relates to the field of a semiconductor. The method comprises the following steps of building a plurality of testing structures, wherein all the testing structures are of the same structure; placing shading plates with different widths on each testing structure; performing iron doping on all the testing structures, wherein the areas covered by the shading plates cannot be subject to iron doping, and the areas which can be subject to iron doping are working intervals of the testing structures; simultaneously testing the saturation current and working voltage of all the testing structures, obtaining whether the working intervals corresponding to the testing structures fail or not according to the test results, thus judging whether the low working voltage of the device fails or not. According to the method for testing low working voltage failure of monitoring device, whether the low working voltage fails or not can be quickly determined; the working intervals of a manufacturing process with the problem of fail and the like are quickly found in batches, the development period of the manufacturing process is shortened, and the development cost is effectively saved.