Cobalt (co) and platinum (pt)-based multilayer thin film having inverted structure and method for manufacturing same

The present invention relates to a cobalt (Co) and platinum (Pt)-based multilayer thin film having a novel structure with perpendicular magnetic anisotropy and to a method for manufacturing same. More particularly, the present invention relates to a perpendicular magnetic anisotropic (PMA) multilayer thin film having an inverted structure, comprising cobalt thin film layers and platinum thin film layers alternately stacked on a substrate, wherein the thickness of the cobalt thin film layers is greater than that of the platinum thin film layers. The cobalt and platinum-based multilayer thin film having an inverted structure according to the present invention has a novel structure in that the thickness of a magnetic thin film layer is greater than that of a non-magnetic thin film layer, and the size of perpendicular magnetic anisotropic energy is adjusted according to the thickness of the thin film to thus enable the thin film to be applied as a free layer and a fixed layer in a magnetic tunnel junction structure. The thin film of the present invention provides superior thermal stability to thus maintain high perpendicular magnetic anisotropic (PMA) energy density even after a subsequent heat treatment process, and promotes formation of in-plane magnetic anisotropy to provide the effects of reducing the density of critical current required for magnetization switching, and therefore, the thin film of the present invention can be used effectively in a high performance high density magnetic random access memory(MRAM).