Semiconductor device

Semiconductor device

The semiconductor device includes a bit line, a word line intersecting the bit line, a plurality of first contact patterns, and a plurality of second contact patterns. The word line extends so as to intersect the bit line in plan view. Each of the first contact patterns is elongated in the direction...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: YUKIO MAKI
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator YUKIO MAKI
description The semiconductor device includes a bit line, a word line intersecting the bit line, a plurality of first contact patterns, and a plurality of second contact patterns. The word line extends so as to intersect the bit line in plan view. Each of the first contact patterns is elongated in the direction in which the bit line extends in plan view. Each of the second contact patterns is elongated in directions inclined with respect to the respective directions in which the bit line and the word line extend in plan view. The first contact patterns and the second contact patterns are formed in the same layer over the main surface of a semiconductor substrate.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN104465659A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN104465659A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN104465659A3</originalsourceid><addsrcrecordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoYGJiZmpmamlo7GxKgBAF8bIPo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device</title><source>esp@cenet</source><creator>YUKIO MAKI</creator><creatorcontrib>YUKIO MAKI</creatorcontrib><description>The semiconductor device includes a bit line, a word line intersecting the bit line, a plurality of first contact patterns, and a plurality of second contact patterns. The word line extends so as to intersect the bit line in plan view. Each of the first contact patterns is elongated in the direction in which the bit line extends in plan view. Each of the second contact patterns is elongated in directions inclined with respect to the respective directions in which the bit line and the word line extend in plan view. The first contact patterns and the second contact patterns are formed in the same layer over the main surface of a semiconductor substrate.</description><language>eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150325&amp;DB=EPODOC&amp;CC=CN&amp;NR=104465659A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150325&amp;DB=EPODOC&amp;CC=CN&amp;NR=104465659A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YUKIO MAKI</creatorcontrib><title>Semiconductor device</title><description>The semiconductor device includes a bit line, a word line intersecting the bit line, a plurality of first contact patterns, and a plurality of second contact patterns. The word line extends so as to intersect the bit line in plan view. Each of the first contact patterns is elongated in the direction in which the bit line extends in plan view. Each of the second contact patterns is elongated in directions inclined with respect to the respective directions in which the bit line and the word line extend in plan view. The first contact patterns and the second contact patterns are formed in the same layer over the main surface of a semiconductor substrate.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoYGJiZmpmamlo7GxKgBAF8bIPo</recordid><startdate>20150325</startdate><enddate>20150325</enddate><creator>YUKIO MAKI</creator><scope>EVB</scope></search><sort><creationdate>20150325</creationdate><title>Semiconductor device</title><author>YUKIO MAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN104465659A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>YUKIO MAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YUKIO MAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device</title><date>2015-03-25</date><risdate>2015</risdate><abstract>The semiconductor device includes a bit line, a word line intersecting the bit line, a plurality of first contact patterns, and a plurality of second contact patterns. The word line extends so as to intersect the bit line in plan view. Each of the first contact patterns is elongated in the direction in which the bit line extends in plan view. Each of the second contact patterns is elongated in directions inclined with respect to the respective directions in which the bit line and the word line extend in plan view. The first contact patterns and the second contact patterns are formed in the same layer over the main surface of a semiconductor substrate.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_CN104465659A
source esp@cenet
subjects ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
title Semiconductor device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T19%3A41%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YUKIO%20MAKI&rft.date=2015-03-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN104465659A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true