Structure for monitoring leakage current and junction capacitance at source/drain electrode and gate joint position

The invention provides a structure for monitoring leakage current and junction capacitance at a source/drain electrode and gate joint position. In the structure for monitoring the leakage current and the junction capacitance at the source/drain electrode and gate joint position, a gate unit is formed on a semiconductor substrate. The gate unit and a gate structure of a semiconductor device are the same, so that the structure for monitoring the leakage current and the junction capacitance at the source/drain electrode and gate joint position is similar to the structure of the semiconductor device, and accordingly influence on the leakage current and the junction capacitance at the source/drain electrode and gate joint position and a gate and shallow doping zone can be monitored accurately.