Anneal module for semiconductor wafers

An anneal module for annealing semiconductor material wafers and similar substrates reduces particle contamination and oxygen ingress while providing uniform heating including for 500 DEG C. processes. The anneal module may include a process chamber formed in a metal body having internal cooling lin...

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Bibliographische Detailangaben
Hauptverfasser:	VINCENT STEFFAN FRANCISCHETTI, GREGORY J. WILSON, KYLE M. HANSON, PAUL WIRTH, ROBERT B. MOORE
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	An anneal module for annealing semiconductor material wafers and similar substrates reduces particle contamination and oxygen ingress while providing uniform heating including for 500 DEG C. processes. The anneal module may include a process chamber formed in a metal body having internal cooling lines. A hot plate has a pedestal supported on a thermal choke on the body. A gas distributor in the lid over the hot plate flows gas uniformly over the wafer. A transfer mechanism moves a hoop to shift the wafer between the hot plate and a cold plate.