SEMICONDUCTOR DEVICE

The reliability of a power MISFET made of a nitride semiconductor material is improved. A strain relaxation film is disposed between a polyimide film and a gate electrode, to suppress a stress exerted on an electron supply layer and a channel layer from the polyimide film, and suppress a stress stra...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TOSHIYUKI TAKEWAKI, HIRONOBU MIYAMOTO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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