SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

The reliability of a power MISFET made of a nitride semiconductor material is improved. A strain relaxation film is disposed between a polyimide film and a gate electrode, to suppress a stress exerted on an electron supply layer and a channel layer from the polyimide film, and suppress a stress stra...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TOSHIYUKI TAKEWAKI, HIRONOBU MIYAMOTO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The reliability of a power MISFET made of a nitride semiconductor material is improved. A strain relaxation film is disposed between a polyimide film and a gate electrode, to suppress a stress exerted on an electron supply layer and a channel layer from the polyimide film, and suppress a stress strain generated in the electron supply layer and the channel layer. As a result, a change in channel electron concentration in the channel layer is suppressed to prevent a threshold voltage or an on-resistance of the power MISFET from fluctuating.