METHOD OF MANUFACTURING MOS-TYPE SEMICONDUCTOR DEVICE

A method of manufacturing a MOS-type semiconductor device capable of increasing the thickness of a gate oxide film and obtaining high gate withstanding power and reduced switching loss without increasing a gate threshold voltage Vth is provided. A p-type well region (3) is selectively formed on one...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TAKEYOSHI NISHIMURA, SHUHEI TATEMICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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