Memory body element, memory body array and operation method thereof

The invention discloses a memory body element, a memory body array and an operation method thereof. The memory body element comprises a substrate with a first conductive type, a first doping region with a second conductive type, a second doping region with a second conductive type, a first floating gate electrode, a second floating gate electrode and a character gate electrode. The first and second doping regions are arranged in the substrate. The first floating gate electrode is arranged above the substrate and electrically coupled with the first doping region. The second floating gate electrode is arranged above the substrate and electrically coupled with the second doping region. The character gate electrode is arranged between the first and second doping regions above the substrate. The character gate electrode comprises a first component extending to the position above the first floating gate electrode and a second component extending to the position above the second floating gate electrode.