Thin film transistor and method for manufacturing display array substrate using the thin film transistor
The invention provides a method for manufacturing a thin film transistor. The manufacturing method includes: forming a grid electrode on a substrate and a grid electrode insulating layer that covers the grid electrode; forming a channel layer on the grid electrode insulating layer in a position corr...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The invention provides a method for manufacturing a thin film transistor. The manufacturing method includes: forming a grid electrode on a substrate and a grid electrode insulating layer that covers the grid electrode; forming a channel layer on the grid electrode insulating layer in a position corresponding to the grid electrode, and coating an etching barrier layer on the channel layer; performing high-temperature hard roasting treatment on the etching barrier layer; coating a photoresistance layer on the etching barrier layer; patterning the photoresistance layer, and developing two through guide holes; using the patterned photoresistance layer as a shield, etching the etching barrier layer to the channel layer to form two contact holes; removing the remaining photoresistance layer; and forming a source electrode and a drain electrode in the positions of the two contact holes. |
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