Cell with anti-PID effect and preparation method thereof

Disclosed in the invention is a cell with an anti-PID effect and a preparation method thereof. The cell comprises a crystalline silica substrate after etching and cleaning, an anti-potential-induced-degradation (PID) protection layer, and a passivation anti-reflection layer, wherein the anti-PID protection layer and the passivation anti-reflection layer are successively deposisted on the crystalline silica substrate; and the anti-PID protection layer is a silicon-oxygen (Si-O) bond compound thin layer. According to the invention, because of protection from the anti-PID thin layer containing the Si-O bond, the cell has the excellent anti-PID effect; and thus no negative effects on the efficiency, appearance, and yield of the products and the like are caused. With the Si-O bond thin layer, the PID effect occurrence can be prevented and delayed, effective saturation of the suspension bond of the cell surface is also realized, and the recombination center of the cell surface can be reduced, so that the electrical performance of the cell can be improved to the certain extent.