Heterostructure device based on T-shaped gate-drain complex field plate and manufacturing method thereof

The invention discloses a heterostructure device based on a T-shaped gate-drain complex field plate and a manufacturing method thereof and mainly solves a problem that the process for realizing high breakdown voltage is complex in the present field plate technique. The heterostructure device comprises a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a Walter Schottky drain electrode (5), a table top (6), a gate electrode (7), a passivation layer (8) and a protective layer (13). A gate groove (9) and a drain groove (10) are etched in the passivation layer (8); a T-shaped gate field plate (11) and a T-shaped drain field plate (12) are deposited between the passivation layer (8) and the protective layer (13); the T-shaped gate field plate (11) is electrically connected with the gate electrode (7) and the lower end is completely filled in the gate groove (9); the T-shaped drain field plate (12) is electrically connected with the Walter Schottky drain electrode (5) and the lower end is completely filled in the drain groove (10). The heterostructure device has the advantages of simple manufacturing process, good forward characteristics and reverse characteristics and high rate of finished products and can be used as a switch device.