Novel GaN-base reinforced HEMT device and manufacturing method thereof

The invention discloses a novel GaN (gallium nitride)-base reinforced HEMT (high electron mobility transistor) device, and the device comprises: a GaN intrinsic layer and a GaN barrier layer both which are successively grown on a substrate; a high hole concentration structure layer is covered on the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIU ZHIQIANG, LI DI, LIANG YA'NAN, FAN ZHONGCHAO, HE ZHI, CHENG ZHE, JIA LIFANG, WANG XIAODONG, YANG FUHUA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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