Novel GaN-base reinforced HEMT device and manufacturing method thereof

The invention discloses a novel GaN (gallium nitride)-base reinforced HEMT (high electron mobility transistor) device, and the device comprises: a GaN intrinsic layer and a GaN barrier layer both which are successively grown on a substrate; a high hole concentration structure layer is covered on the partial upper surface of the intrinsic layer; first and second metal electrodes are arranged on the partial upper surface of the intrinsic layer, and the partial upper surface isn't covered with the high hole concentration structure layer; a third metal electrode is covered on the upper surface of the high hole concentration structure layer; a passivation protection layer is covered on the upper surface of the intrinsic layer, and the upper surface isn't covered with the high hole concentration structure layer, and first and second metal electrodes; Ohmic contact is formed among the first and second metal electrodes and the intrinsic layer, and Schottky contact is formed between the third metal electrode and the high hole concentration structure layer. The invention further discloses a manufacturing method of the GaN-base reinforced HEMT device. The device has the advantages of high reliability and good repeatability, and the threshold voltage of the device can be adjusted by selecting different component scopes gradually changed, different nitride alloys and doping density and thickness, thus the manufactured device can satisfy different demands.