Piezoresistive micro-melted high temperature pressure sensor and manufacturing method thereof

The invention belongs to the technical field of piezoresistive pressure sensor manufacturing processes, and particularly relates to a piezoresistive micro-melted high temperature pressure sensor and a manufacturing method thereof. In order to provide a sensor capable of effectively working at high temperature exceeding 200 DEG C, an elastic film plane sensitive area is coated with glass paste, an SOI (silicon on insulator) chip is pasted on the glass paste, a shell component with the pasted SOI chip is placed into a high temperature sintering furnace, preheated and then micro-melted by heating, naturally cooled along with the furnace and taken out, a ceramic thick film circuit board is fixed outside the SOI chip through screws, electrodes of the SOI chip are connected with electrodes of the ceramic thick film circuit board, the corresponding electrodes of the ceramic thick film circuit board are spot-welded, an external gold plated copper foil lead is led out and then connected together with a fire-resistant high temperature wire in a kovar pipe clamping mode, a Wheatstone bridge manufactured by an SOI chip process is isolated by an insulating layer, and working temperature can be increased to be higher than 600 DEG C.