Semiconductor device failure analysis method

The present invention relates to the field of semiconductor reliability analysis, particularly to a semiconductor device failure analysis method. According to the present invention, a failure analysis method for the memory is established, and the voltage comparison analysis on the connection through holes at the failure region and the peripheral region, and the analysis on the voltage comparison analysis result are performed to detect the adjacent region failure problem caused by the redundancy replacing memory region defect being subjected to reliability testing or actual use of the flash memory; and analysis is performed on the redundancy replaced information during the reliability failure so as to provide the strong analysis basis for the reliability failure problem caused by the replacement of the redundancy circuit and provide the analysis and improvement direction for the reduction of the reliability failure rate.