Manufacturing method for high-brightness LED epitaxial materials

Disclosed is a manufacturing method for high-brightness LED epitaxial materials. The manufacturing method includes: firstly, growing a layer of thicker N-type gallium aluminum arsenide materials on the surface of a GaAs substrate slice by adopting a liquid phase epitaxy method; then, growing an LED...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WAN JINPING, YE JIANQING, HUANG QIYAN, LIU FANGJIAO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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