Manufacturing method for high-brightness LED epitaxial materials

Disclosed is a manufacturing method for high-brightness LED epitaxial materials. The manufacturing method includes: firstly, growing a layer of thicker N-type gallium aluminum arsenide materials on the surface of a GaAs substrate slice by adopting a liquid phase epitaxy method; then, growing an LED luminous layer on the surfaces of the gallium aluminum arsenide materials by an MOCVD (metal organic chemical vapor deposition) method; finally, removing light-absorbing GaAs substrate, wherein the LED luminous layer and the gallium aluminum arsenide layer form an independent LED epitaxial structure. The thicker GaAiAs material is taken as the substrate of LED epitaxial growth, so that the LED luminous layer is well protected; direct use is achieved after the GaAs substrate is removed, and problems about fragments, hidden cracks, falling off and the like of the GaAs substrate in transferring are solved; meanwhile, light can be beneficially emitted by the GaAiAs materials, external quantum efficiency and brightness of LED epitaxial materials are improved, and good improvement effect on the uniformity of LED luminance is achieved; the manufacturing method has the advantages of simplified process, cost conservation, high yield rate and reliable performance.