Metal electrode patch production method

The invention provides a high-conductivity metal electrode patch production method. The method includes: selecting a support substrate with at least the surface layer being nitride, and subjecting the support substrate to polishing treatment or surface hydrophilia treatment. The substrate comprises a silicon wafer or refractory ceramics; the silicon wafer comprises a monocrystalline silicon wafer or polycrystalline silicon wafer, and the refractory ceramics comprise oxide-free nitrogen ceramics and oxide ceramics. The suitable materials are selected, a method combining surface coating and surface treatment is utilized, binding force between the electrode and the substrate is lowered greatly, the electrode can be stripped directly with adhesive tape, the stripped surface is quite smooth, and no metal residual is left on the substrate. No organic solution process is related, electrode patches with shapes unlimited can be formed, and the shortcomings of complex procedures and low electric conductivity due to the fact that the electrode is produced on a device directly are overcome.