Semiconductor device

A semiconductor device includes a plurality of cells in a main region, a plurality of cells in a sensing region, and a transistor. The transistor is configured to drive each of the plurality of cells in the main region and each of the plurality of cells in the sensing region. The gate shut-off time...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YATAKA SHINICHI, KUMIKO YAMAUCHI, TOSHIMITSU KOBORI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semiconductor device includes a plurality of cells in a main region, a plurality of cells in a sensing region, and a transistor. The transistor is configured to drive each of the plurality of cells in the main region and each of the plurality of cells in the sensing region. The gate shut-off time for the sensing region is set according to D=(Cgs/Cgm)*(Rgs/Rgm) to be earlier than a gate shut-off time for the main region. Rgm indicates a gate resistance value for the main region and Rgs indicates a gate resistance value for the sensing region in the transistor, and Cgm indicates a parasitic capacitance for the main region and Cgs indicates a parasitic capacitance for the sensing region in the transistor.