Semiconductor device and method for fabricating the same
The invention discloses a semiconductor device and a method for fabricating the same. The semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second e...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The invention discloses a semiconductor device and a method for fabricating the same. The semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed. |
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