Method for improving plasma damage to device

Method for improving plasma damage to device

The invention discloses a method for improving plasma damage to a device. The method comprises the following steps: providing a wafer and putting the wafer on an etching machine platform; adjusting a thimble of the etching machine platform so that the distance between the thimble and the wafer is le...

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Hauptverfasser: ZHU JUN, ZENG LINHUA, LYU YUKUN, ZHANG XUSHENG, LIU ZHAO, REN YU
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ZHU JUN
ZENG LINHUA
LYU YUKUN
ZHANG XUSHENG
LIU ZHAO
REN YU
description The invention discloses a method for improving plasma damage to a device. The method comprises the following steps: providing a wafer and putting the wafer on an etching machine platform; adjusting a thimble of the etching machine platform so that the distance between the thimble and the wafer is less than 0.2cm; starting the etching machine platform to carry out etching movement on the wafer. According to the method, the distance between the thimble and the wafer is reduced, so that breakdown voltage of gas is increased and the penetration discharge between the wafer and the thimble is avoided; current of an electrostatic adsorption disc is tested to be normal and has no sine wave changes, so that the plasma damage to the wafer is avoided and the yield of the wafer is improved.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for improving plasma damage to device
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