Method for improving plasma damage to device

The invention discloses a method for improving plasma damage to a device. The method comprises the following steps: providing a wafer and putting the wafer on an etching machine platform; adjusting a thimble of the etching machine platform so that the distance between the thimble and the wafer is less than 0.2cm; starting the etching machine platform to carry out etching movement on the wafer. According to the method, the distance between the thimble and the wafer is reduced, so that breakdown voltage of gas is increased and the penetration discharge between the wafer and the thimble is avoided; current of an electrostatic adsorption disc is tested to be normal and has no sine wave changes, so that the plasma damage to the wafer is avoided and the yield of the wafer is improved.