Method for manufacturing thin film capacitor with anodic oxidation film as dielectric layer

The invention discloses a method for manufacturing a thin film capacitor with an anodic oxidation film as a dielectric layer. The method comprises the following steps: a substrate is prepared, and a layer of metal or metal oxide thin film is deposited on the substrate; the thin film is patterned by a photolithography and etching process to form a lower electrode and a first lower electrode lead-out wire; photoresist is applied to the lower electrode and the first lower electrode lead-out wire, and an anodic oxidation mask is formed through a photolithography process; anode oxidation is carried out on the lower electrode to form a dielectric layer; and the photoresist is removed, an electrode layer is deposited on the substrate, and the electrode layer is patterned by a photolithography and etching process to form a second lower electrode lead-out wire, an upper electrode, and an upper electrode lead-out wire. Manufacturing equipment and processes needed by the method are simple, the manufacturing cost is low, the capacitance value and voltage value are easy to adjust, and excellent electrical characteristics are achieved.