Method applied to measurement of stress distribution information of c-surface GaN material along c axis

The invention discloses a method applied to measurement of stress distribution information of a c-surface GaN material along a c axis and mainly aims to solve the problem in the prior art that the stress distribution information along the c axis cannot be obtained by an x-ray diffraction instrument. The method comprises the following technical steps: horizontally placing the c-surface GaN material on an objective table of an x-ray diffraction instrument; sequentially focusing a crystal plane (0002) and a crystal plane (103) in the GaN material; reducing the transmission depth of x ray at a step length of not smaller than 50nm and obtaining Bragg angles of the crystal plane (103) in different transmission depths; substituting a group of measured Bragg angles into a Bragg equation to obtain a group of inter-planar distances of the crystal plane (103); and calculating the stress distribution information of the c-surface GaN material along the c axis according to the group of inter-planar distances. The method is low in test cost and free of damage to the tested material, is capable of obtaining a group of stress distribution information along the c axis and can be used for analyzing the stress distribution of the c-surface GaN material along the c axis.