Method for measuring information about distribution of stress of 6H-SiC material along surface normal

The invention discloses a method for measuring information about distribution of stress of a 6H-SiC material along surface normal. The method comprises the following technical steps: horizontally placing the 6H-SiC material on an object stage of an x-ray diffractometer; sequentially performing focus...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHANG PENG, HAO YUE, JIANG RENYUAN, ZHANG JINFENG, NIE YUHU
Format:	Patent
Sprache:	eng
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
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