Method for measuring information about distribution of stress of 6H-SiC material along surface normal

The invention discloses a method for measuring information about distribution of stress of a 6H-SiC material along surface normal. The method comprises the following technical steps: horizontally placing the 6H-SiC material on an object stage of an x-ray diffractometer; sequentially performing focusing on a crystal face (0002) and another crystal face shown in the specification in the 6H-SiC material; lowering the transmission depth of an x ray by virtue of step length being not less than 50nm, and acquiring Bragg angles of the crystal face shown in the specification in the presence of different transmission depth; substituting a group of measured Bragg angles into a Bragg equation to obtain the spacing of one group of crystal faces shown in the specification; and calculating the information about distribution of stress of the 6H-SiC material along surface normal according to the group of spacing. The method has the advantages of being low in measurement cost and avoiding damage to measured materials, and can be used for precisely analyzing a mechanism of influencing material crystallization quality by stress so as to improve the material crystallization quality.