Method for detecting defects of 8-inch polished wafers through light-transmitting mirror
The invention provides a method for detecting the defects of 8-inch polished wafers through a light-transmitting mirror, wherein in the method, the defects of the 8-inch polished wafers are detected through the light-transmitting mirror. By means of the method, the surface structural properties of t...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The invention provides a method for detecting the defects of 8-inch polished wafers through a light-transmitting mirror, wherein in the method, the defects of the 8-inch polished wafers are detected through the light-transmitting mirror. By means of the method, the surface structural properties of the large-area silicon wafers are detected without damage in real time through the light-transmitting mirror, the map of the poor defects of the various silicon wafers is obtained through summarization, and the quality of the monocrystalline silicon wafers is monitored on line. |
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