LDMOS device and manufacture method thereof

LDMOS device and manufacture method thereof

The invention discloses an LDMOS device and a manufacture method thereof. The manufacture method of the LDMOS device comprises the steps of fabricating a gate region of the LDMOS device on a semiconductor substrate, employing a mask to inject a first doping matter into the semiconductor substrate ob...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: JI YANGYONG, JOEY MCGREGOR, ZHENG ZHIXING
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator JI YANGYONG
JOEY MCGREGOR
ZHENG ZHIXING
description The invention discloses an LDMOS device and a manufacture method thereof. The manufacture method of the LDMOS device comprises the steps of fabricating a gate region of the LDMOS device on a semiconductor substrate, employing a mask to inject a first doping matter into the semiconductor substrate obliquely at a certain angle and employing the same masking to inject the first doping matter into the semiconductor substrate vertically, wherein the region formed by inclined injection and the region formed by vertical injection are jointly used for forming a body region of the LDMOS device; and fabricating a source electrode region and a drainage electrode contact region of the LDMOS device, wherein the source electrode region and the drainage electrode contact region adopt second doping different from first doping. The method and device are advantaged by low thermal budget, low on-resistance, and high breakdown voltage.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN104299998A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN104299998A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN104299998A3</originalsourceid><addsrcrecordid>eNrjZND2cfH1D1ZISS3LTE5VSMxLUchNzCtNS0wuKS1KVchNLcnIT1EoyUgtSs1P42FgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hgYmRpZAYOFoTIwaABwmKQM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LDMOS device and manufacture method thereof</title><source>esp@cenet</source><creator>JI YANGYONG ; JOEY MCGREGOR ; ZHENG ZHIXING</creator><creatorcontrib>JI YANGYONG ; JOEY MCGREGOR ; ZHENG ZHIXING</creatorcontrib><description>The invention discloses an LDMOS device and a manufacture method thereof. The manufacture method of the LDMOS device comprises the steps of fabricating a gate region of the LDMOS device on a semiconductor substrate, employing a mask to inject a first doping matter into the semiconductor substrate obliquely at a certain angle and employing the same masking to inject the first doping matter into the semiconductor substrate vertically, wherein the region formed by inclined injection and the region formed by vertical injection are jointly used for forming a body region of the LDMOS device; and fabricating a source electrode region and a drainage electrode contact region of the LDMOS device, wherein the source electrode region and the drainage electrode contact region adopt second doping different from first doping. The method and device are advantaged by low thermal budget, low on-resistance, and high breakdown voltage.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150121&amp;DB=EPODOC&amp;CC=CN&amp;NR=104299998A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150121&amp;DB=EPODOC&amp;CC=CN&amp;NR=104299998A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JI YANGYONG</creatorcontrib><creatorcontrib>JOEY MCGREGOR</creatorcontrib><creatorcontrib>ZHENG ZHIXING</creatorcontrib><title>LDMOS device and manufacture method thereof</title><description>The invention discloses an LDMOS device and a manufacture method thereof. The manufacture method of the LDMOS device comprises the steps of fabricating a gate region of the LDMOS device on a semiconductor substrate, employing a mask to inject a first doping matter into the semiconductor substrate obliquely at a certain angle and employing the same masking to inject the first doping matter into the semiconductor substrate vertically, wherein the region formed by inclined injection and the region formed by vertical injection are jointly used for forming a body region of the LDMOS device; and fabricating a source electrode region and a drainage electrode contact region of the LDMOS device, wherein the source electrode region and the drainage electrode contact region adopt second doping different from first doping. The method and device are advantaged by low thermal budget, low on-resistance, and high breakdown voltage.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND2cfH1D1ZISS3LTE5VSMxLUchNzCtNS0wuKS1KVchNLcnIT1EoyUgtSs1P42FgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hgYmRpZAYOFoTIwaABwmKQM</recordid><startdate>20150121</startdate><enddate>20150121</enddate><creator>JI YANGYONG</creator><creator>JOEY MCGREGOR</creator><creator>ZHENG ZHIXING</creator><scope>EVB</scope></search><sort><creationdate>20150121</creationdate><title>LDMOS device and manufacture method thereof</title><author>JI YANGYONG ; JOEY MCGREGOR ; ZHENG ZHIXING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN104299998A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JI YANGYONG</creatorcontrib><creatorcontrib>JOEY MCGREGOR</creatorcontrib><creatorcontrib>ZHENG ZHIXING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JI YANGYONG</au><au>JOEY MCGREGOR</au><au>ZHENG ZHIXING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LDMOS device and manufacture method thereof</title><date>2015-01-21</date><risdate>2015</risdate><abstract>The invention discloses an LDMOS device and a manufacture method thereof. The manufacture method of the LDMOS device comprises the steps of fabricating a gate region of the LDMOS device on a semiconductor substrate, employing a mask to inject a first doping matter into the semiconductor substrate obliquely at a certain angle and employing the same masking to inject the first doping matter into the semiconductor substrate vertically, wherein the region formed by inclined injection and the region formed by vertical injection are jointly used for forming a body region of the LDMOS device; and fabricating a source electrode region and a drainage electrode contact region of the LDMOS device, wherein the source electrode region and the drainage electrode contact region adopt second doping different from first doping. The method and device are advantaged by low thermal budget, low on-resistance, and high breakdown voltage.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_CN104299998A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title LDMOS device and manufacture method thereof
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T02%3A43%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JI%20YANGYONG&rft.date=2015-01-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN104299998A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true