LDMOS device and manufacture method thereof

The invention discloses an LDMOS device and a manufacture method thereof. The manufacture method of the LDMOS device comprises the steps of fabricating a gate region of the LDMOS device on a semiconductor substrate, employing a mask to inject a first doping matter into the semiconductor substrate obliquely at a certain angle and employing the same masking to inject the first doping matter into the semiconductor substrate vertically, wherein the region formed by inclined injection and the region formed by vertical injection are jointly used for forming a body region of the LDMOS device; and fabricating a source electrode region and a drainage electrode contact region of the LDMOS device, wherein the source electrode region and the drainage electrode contact region adopt second doping different from first doping. The method and device are advantaged by low thermal budget, low on-resistance, and high breakdown voltage.