Ion implantation system and method of processing a substrate

Ion implantation system and method of processing a substrate

Techniques for processing a substrate may be realized with an ion implantation system comprising an ion source having an ion source chamber. The ion source chamber has a wall that defines an ion generation region and an extraction aperture through which ions in the ion generation region are extracte...

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Hauptverfasser: RADOVANOV SVETLANA B, WHITE RICHARD M, DANIELS KEVIN M, COBB ERIC R, PITMAN DAVID W, KOO BON-WOONG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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creator RADOVANOV SVETLANA B
WHITE RICHARD M
DANIELS KEVIN M
COBB ERIC R
PITMAN DAVID W
KOO BON-WOONG
description Techniques for processing a substrate may be realized with an ion implantation system comprising an ion source having an ion source chamber. The ion source chamber has a wall that defines an ion generation region and an extraction aperture through which ions in the ion generation region are extracted. The extraction system is positioned downstream of the ion source near the extraction aperture. A material source comprises a fist source containing first material, a second source containing the second material, and a first and second conduits, wherein the first conduit may be in communication with the first source and the ion source chamber to provide the first material from the first source to the ion source chamber, and wherein the second conduit may be in communication with the second source. A first region outside of the ion source chamber provides the second material from the second source to the first region.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN104285273A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN104285273A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN104285273A3</originalsourceid><addsrcrecordid>eNrjZLDxzM9TyMwtyEnMK0ksyQRyiiuLS1JzFRLzUhRyU0sy8lMU8tMUCoryk1OLizPz0hUSFYpLk4pLihJLUnkYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyzn6GBiZGFqZG5saMxMWoAABYwAg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Ion implantation system and method of processing a substrate</title><source>esp@cenet</source><creator>RADOVANOV SVETLANA B ; WHITE RICHARD M ; DANIELS KEVIN M ; COBB ERIC R ; PITMAN DAVID W ; KOO BON-WOONG</creator><creatorcontrib>RADOVANOV SVETLANA B ; WHITE RICHARD M ; DANIELS KEVIN M ; COBB ERIC R ; PITMAN DAVID W ; KOO BON-WOONG</creatorcontrib><description>Techniques for processing a substrate may be realized with an ion implantation system comprising an ion source having an ion source chamber. The ion source chamber has a wall that defines an ion generation region and an extraction aperture through which ions in the ion generation region are extracted. The extraction system is positioned downstream of the ion source near the extraction aperture. A material source comprises a fist source containing first material, a second source containing the second material, and a first and second conduits, wherein the first conduit may be in communication with the first source and the ion source chamber to provide the first material from the first source to the ion source chamber, and wherein the second conduit may be in communication with the second source. A first region outside of the ion source chamber provides the second material from the second source to the first region.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150114&amp;DB=EPODOC&amp;CC=CN&amp;NR=104285273A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150114&amp;DB=EPODOC&amp;CC=CN&amp;NR=104285273A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RADOVANOV SVETLANA B</creatorcontrib><creatorcontrib>WHITE RICHARD M</creatorcontrib><creatorcontrib>DANIELS KEVIN M</creatorcontrib><creatorcontrib>COBB ERIC R</creatorcontrib><creatorcontrib>PITMAN DAVID W</creatorcontrib><creatorcontrib>KOO BON-WOONG</creatorcontrib><title>Ion implantation system and method of processing a substrate</title><description>Techniques for processing a substrate may be realized with an ion implantation system comprising an ion source having an ion source chamber. The ion source chamber has a wall that defines an ion generation region and an extraction aperture through which ions in the ion generation region are extracted. The extraction system is positioned downstream of the ion source near the extraction aperture. A material source comprises a fist source containing first material, a second source containing the second material, and a first and second conduits, wherein the first conduit may be in communication with the first source and the ion source chamber to provide the first material from the first source to the ion source chamber, and wherein the second conduit may be in communication with the second source. A first region outside of the ion source chamber provides the second material from the second source to the first region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDxzM9TyMwtyEnMK0ksyQRyiiuLS1JzFRLzUhRyU0sy8lMU8tMUCoryk1OLizPz0hUSFYpLk4pLihJLUnkYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyzn6GBiZGFqZG5saMxMWoAABYwAg</recordid><startdate>20150114</startdate><enddate>20150114</enddate><creator>RADOVANOV SVETLANA B</creator><creator>WHITE RICHARD M</creator><creator>DANIELS KEVIN M</creator><creator>COBB ERIC R</creator><creator>PITMAN DAVID W</creator><creator>KOO BON-WOONG</creator><scope>EVB</scope></search><sort><creationdate>20150114</creationdate><title>Ion implantation system and method of processing a substrate</title><author>RADOVANOV SVETLANA B ; WHITE RICHARD M ; DANIELS KEVIN M ; COBB ERIC R ; PITMAN DAVID W ; KOO BON-WOONG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN104285273A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>RADOVANOV SVETLANA B</creatorcontrib><creatorcontrib>WHITE RICHARD M</creatorcontrib><creatorcontrib>DANIELS KEVIN M</creatorcontrib><creatorcontrib>COBB ERIC R</creatorcontrib><creatorcontrib>PITMAN DAVID W</creatorcontrib><creatorcontrib>KOO BON-WOONG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RADOVANOV SVETLANA B</au><au>WHITE RICHARD M</au><au>DANIELS KEVIN M</au><au>COBB ERIC R</au><au>PITMAN DAVID W</au><au>KOO BON-WOONG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Ion implantation system and method of processing a substrate</title><date>2015-01-14</date><risdate>2015</risdate><abstract>Techniques for processing a substrate may be realized with an ion implantation system comprising an ion source having an ion source chamber. The ion source chamber has a wall that defines an ion generation region and an extraction aperture through which ions in the ion generation region are extracted. The extraction system is positioned downstream of the ion source near the extraction aperture. A material source comprises a fist source containing first material, a second source containing the second material, and a first and second conduits, wherein the first conduit may be in communication with the first source and the ion source chamber to provide the first material from the first source to the ion source chamber, and wherein the second conduit may be in communication with the second source. A first region outside of the ion source chamber provides the second material from the second source to the first region.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
title Ion implantation system and method of processing a substrate
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T02%3A59%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=RADOVANOV%20SVETLANA%20B&rft.date=2015-01-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN104285273A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true