Ion implantation system and method of processing a substrate

Techniques for processing a substrate may be realized with an ion implantation system comprising an ion source having an ion source chamber. The ion source chamber has a wall that defines an ion generation region and an extraction aperture through which ions in the ion generation region are extracted. The extraction system is positioned downstream of the ion source near the extraction aperture. A material source comprises a fist source containing first material, a second source containing the second material, and a first and second conduits, wherein the first conduit may be in communication with the first source and the ion source chamber to provide the first material from the first source to the ion source chamber, and wherein the second conduit may be in communication with the second source. A first region outside of the ion source chamber provides the second material from the second source to the first region.