Test structure for monitoring performance of dielectric layers
The invention provides a test structure for monitoring the performance of dielectric layers. A first metal connecting wire and a second metal connecting wire which are staggered and arranged in a comb shape are formed in the dielectric layer between first metal layers, a third metal connecting wire...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The invention provides a test structure for monitoring the performance of dielectric layers. A first metal connecting wire and a second metal connecting wire which are staggered and arranged in a comb shape are formed in the dielectric layer between first metal layers, a third metal connecting wire and a fourth metal connecting wire which are staggered and arranged in a comb shape are formed in the dielectric layer between second metal layers, a dielectric interlayer is formed between the dielectric layer between the first metal layers and the dielectric layer between the second metal layers, the first metal connecting wire is connected with the fourth metal connecting wire through through hole connecting wires, and the second metal connecting wire and the third metal connecting wire are connected through through hole connecting wires. By monitoring the leakage current between the first metal connecting wire and the second metal connecting wire, the performance of the same dielectric layer and different dielectric layers can be monitored, and the monitoring efficiency is improved. |
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