Method for manufacturing IGZO layer and TFT

The invention provides a method for manufacturing an IGZO layer and a TFT. The method includes the steps of (1) depositing the IGZO layer and forming a surface oxygen protective layer on the IGZO layer; (2) coating a photoresist on the IGZO layer and carrying out exposure and development on the photoresist so as to form a photoresist pattern; (3) etching the IGZO layer and carrying out photoresist removal later. According to the method for manufacturing the IGZO layer and the TFT, influences of H atoms on the IGZO layer are effectively blocked by forming the oxygen protective layer, and the situation that the IGZO layer is changed from a semiconductor into a conductor by the H atoms is avoided, so that stability of the IGZO layer and the TFT is improved, and threshold voltage negative bias voltage generated due to long-time continuous use of a device is lowered.