Monocrystalline gallium oxide and monocrystalline gallium oxide substrate

[Problem] To provide a monocrystalline gallium oxide and monocrystalline gallium oxide substrate enabling improved light emission efficiency. [Solution] A monocrystalline gallium oxide (13) has a dislocation density of up to 3.5106/cm2. The monocrystalline gallium oxide (13) is produced by an EFG pr...

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Hauptverfasser:	NISHIGUCHI KENGO, AIDA HIDEO, IKEJIRI KENJIRO, NAKAMURA MOTOICHI, KOYAMA KOUJI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	[Problem] To provide a monocrystalline gallium oxide and monocrystalline gallium oxide substrate enabling improved light emission efficiency. [Solution] A monocrystalline gallium oxide (13) has a dislocation density of up to 3.5106/cm2. The monocrystalline gallium oxide (13) is produced by an EFG process. The seed-touch temperature of the EFG process is 1930-1950 DEG C. The neck section (13a) of the monocrystalline gallium oxide (13) is 0.8 mm or less. A monocrystalline gallium oxide substrate (21) is composed of the monocrystalline gallium oxide (13).